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26 May 1995 Feasibility study of argon fluoride excimer laser for microlithography
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Abstract
A feasibility study of ArF excimer laser as a light source for subquarter micron design rule lithography is presented. Partially narrowed KLES-G1A ArF laser produces 57-pm (FWHM) bandwidth pulses with an average power of 5.1 W. Narrow-band operated KLES-G1A generated 7.2- pm (FWHM) pulses with 1.4 W. Further high output power with narrow-band spectrum was achieved by using injection-locking technique. The injection-locked ArF laser system generated 0.8-pm (FWHM) bandwidth pulses with an average power of 250 W. We also point out some problems appeared in the laser operation.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Komori, Hidetomi Ochi, Osamu Wakabayashi, and Hakaru Mizoguchi "Feasibility study of argon fluoride excimer laser for microlithography", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209315
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