Focus effects in submicron optical lithography, part 4: metrics for depth of focus (Oral Standby)

Chris A. Mack

doi:10.1117/12.209276

26 May 1995 Focus effects in submicron optical lithography, part 4: metrics for depth of focus

Chris A. Mack

Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209276
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Common uses of the term 'depth of focus' (DOF) are explored as it relates to semiconductor lithography. A definition of DOF is given which is most appropriate to photolithography for IC manufacturing and this definition is compared to other DOF metrics. In particular, simple methods for determining DOF (either experimentally or through simulation) lead to DOF-like metrics. These metrics are compared to the definition of DOF and their accuracy are evaluated. Examples of the use of the definition for DOF for studying trends in lithography are given.

Citation Download Citation

Chris A. Mack "Focus effects in submicron optical lithography, part 4: metrics for depth of focus", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209276

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available