Implementation of i-line lithography to 0.30 um design rules

KeunYoung Kim; Hung-Eil Kim; Il-Ho Lee; Jin-Soo Kim; Jun-Sung Chun; Ikboum Hur; Seung-Chan Moon; Ki-Ho Baik; Soo-Han Choi

doi:10.1117/12.209286

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26 May 1995 Implementation of i-line lithography to 0.30 um design rules

KeunYoung Kim, Hung-Eil Kim, Il-Ho Lee, Jin-Soo Kim, Jun-Sung Chun, Ikboum Hur, Seung-Chan Moon, Ki-Ho Baik, Soo-Han Choi

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Proceedings Volume 2440, Optical/Laser Microlithography VIII; (1995) https://doi.org/10.1117/12.209286
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

The optical lithography is extending its life by combining high numerical aperture (NA) optics and shorter wavelength. The shorter wavelength lithography has required the new developments of related technologies. In particular, DUV resists require an entirely different resist chemistry. Much progress has been demonstrated in the field of transparent chemically amplified resists with high sensitivity. However, this DUV lithography ((lambda) equals 248 nm) has been delayed for mass production due to their limitations, such as (i) delay time effects, (ii) high cost ownership due to expensive resist materials and laser maintenance, and (iii) critical dimension (CD) variation over topography caused by multireflection of topographic features. On the other hand, i- line lithography ((lambda) equals 365 nm) has apparently been applied to 64M DRAM of 0.35 micrometers design rule, and attempted to 0.30 micrometers technology which corresponds to 2nd generation 64M DRAM or 1st generation 256 M DRAM. It might be achieved by combination of off-axis illumination (OAI), phase shift mask (PMS) and advanced resist process technique of i-line lithography. Therefore, i-line lithography can be more practical method rather than DUV lithography for the mass production. In this paper, we have optimized the i-line lithographic techniques for the various pattern shape and density for 0.30 micrometers design rule. Optimum duty ratio was tried to find for line and space, contact hole patterns. The basic rule is to keep the minimum Cr width over 0.30 micrometers mask. OAI have been applied to get higher contrast of line and space, and even contact hole patterns, and achieve good pattern fidelities of island patterns. By the implementation of OAI, process latitudes were greatly improved compared to that of conventional techniques. In order to optimize the process over the actual topography, optimum numerical aperture (NA) and aperture of the OAI were selected. In conclusion, 0.30 micrometers design rule device was successfully fabricated by optimizing the advanced i-line lithographic techniques.

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KeunYoung Kim, Hung-Eil Kim, Il-Ho Lee, Jin-Soo Kim, Jun-Sung Chun, Ikboum Hur, Seung-Chan Moon, Ki-Ho Baik, and Soo-Han Choi "Implementation of i-line lithography to 0.30 um design rules", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209286

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