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26 May 1995 Practical use of simulation for advanced lithography techniques
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Abstract
Advanced lithography techniques for the sub-half-micron range need a 'balanced' set of parameters to get the necessary enhanced resolution and process latitudes. The influence of every parameter ((lambda) , NA, (sigma) , mask type, illumination geometry) has been studied by extensive use of simulation techniques. The results are visualized in a comparison matrix. So trends can be observed and using this matrix it will be possible to decide whether or not one can use extremely high NA values in order to get high resolution and which additional methods will be necessary for compensation of the reduced focus latitude by NA increase.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leonhard Mader and Norbert Lehner "Practical use of simulation for advanced lithography techniques", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209272
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