Paper
26 May 1995 Step and scan: the maturing technology
Harry Sewell
Author Affiliations +
Abstract
This paper reviews the status of step-and-scan technology. It reviews the main features of the technology and highlights its advantages over the conventional step-and-repeat technology. Data is presented to show the superior field distortion, linewidth control, and overlay performance offered by step-and-scan. The future direction of the technology is discussed in the context of the Semiconductor Industry Association (SIA) roadmap. It is indicated that the step-and-scan technique will allow optical lithography to extend below 180 nm resolution.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry Sewell "Step and scan: the maturing technology", Proc. SPIE 2440, Optical/Laser Microlithography VIII, (26 May 1995); https://doi.org/10.1117/12.209256
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Distortion

Lithography

Semiconducting wafers

Wafer-level optics

Lithographic illumination

Optical alignment

193nm lithography

RELATED CONTENT

Evaluation of the dual-exposure technique
Proceedings of SPIE (August 22 2001)
150-nm generation lithography equipment
Proceedings of SPIE (July 26 1999)
Application Specific Wafer Stepper
Proceedings of SPIE (January 01 1987)
New technique for optical lithography at low k-factors
Proceedings of SPIE (July 26 1999)
0.10-um overlay for DRAM production using step and scan
Proceedings of SPIE (June 01 1990)

Back to Top