Translator Disclaimer
Paper
8 March 1995 Laser-assisted controlled in-diffusion processes for preparation of optical waveguides and ultrashallow semiconductor junctions
Author Affiliations +
Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203594
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
We present new results in the laser doping of two materials of major interest for applications: LiNbO3 and Si. In both cases a solid dopant source was used. Using a free running ruby laser, we have doped single crystalline lithium niobate with Ti down to 1.5 micrometers . A step- like Ti profile was determined by Rutherford BAckscattering Spectrometry. Irradiating with a cw CO2 laser Si wafers coated with a P-containing paste, n-p junctions were obtained.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maria Dinescu, N. Chitica, Adriana Lita, D. Pantelica, B. Bucur, A. Ferrari, Gabriella Maiello, Mario Bertolotti, Galina Michailova, C. Gerardi, Rossella Giorgi, T. Dekonimos-Makris, and Marco Montecchi "Laser-assisted controlled in-diffusion processes for preparation of optical waveguides and ultrashallow semiconductor junctions", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203594
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top