Application of phase-shift mask to GaAs IC fabrication process

Yoshiki Kojima; Mitsunori Nakatani; Hirofumi Nakano; Kazuya Kamon; Kazuhiko Sato

doi:10.1117/12.212786

3 July 1995 Application of phase-shift mask to GaAs IC fabrication process

Yoshiki Kojima, Mitsunori Nakatani, Hirofumi Nakano, Kazuya Kamon, Kazuhiko Sato

Proceedings Volume 2512, Photomask and X-Ray Mask Technology II; (1995) https://doi.org/10.1117/12.212786
Event: Photomask Japan 1995, 1995, Kanagawa, Japan

Abstract

To obtain stable light contrast, a pattern accuracy, alignment accuracy and irradiation resistance of SOG have been investigated, and pattern layout has been optimized for the subresolution PSM and edge-line PSM. Satisfactory pattern accuracy and no deterioration in transmissivity index during exposure of 500,000 J/cm² have been confirmed on fabricated PSMs. Applying these PSMs to GaAs IC process, a fine gate finger pattern of 0.3 micrometers has successfully been formed without generation of undesirable pattern in the joint area of gate finer and large area pad.

Citation Download Citation

Yoshiki Kojima, Mitsunori Nakatani, Hirofumi Nakano, Kazuya Kamon, and Kazuhiko Sato "Application of phase-shift mask to GaAs IC fabrication process", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212786

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