Paper
3 July 1995 Optical proximity correction for super-resolution technique
Kazuya Kamon, Wataru Wakamiya, Hitoshi Nagata, Koichi Moriizumi, Teruo Miyamoto, Yasuhito Myoi, Masaaki Tanaka
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Abstract
In order to support next generation ULSI devices, some super resolution techniques are developed. The super resolution technique is effective for smaller pattern but not for larger pattern. This is because the optimum dose is changed, due to the pattern characteristic. However, the z-image profile has sufficient focus latitude. To overcome this problem, the optical proximity correction (OPC) is effective. This phenomenon is observed in the conventional illumination as well as the other super resolution technique. Thus, we developed the OPC system. Using the parallel processing system, we can correct the memory device data in about 2 days. The active region reduction due to the optical diffraction was preferably compensated by the OPC system. Therefore, the OPC system can be applied to the practical use. The OPC system is applicable to the super resolution. Consequently, the applicability of the super resolution technique is significantly enhanced.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuya Kamon, Wataru Wakamiya, Hitoshi Nagata, Koichi Moriizumi, Teruo Miyamoto, Yasuhito Myoi, and Masaaki Tanaka "Optical proximity correction for super-resolution technique", Proc. SPIE 2512, Photomask and X-Ray Mask Technology II, (3 July 1995); https://doi.org/10.1117/12.212792
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Cited by 3 patents.
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KEYWORDS
Optical proximity correction

Photomasks

Super resolution

Computer aided design

Data conversion

Diffraction

Lithium

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