Resistivity and deep-level investigations of detector-grade CdTe: a comparison of different growth techniques

Dirk G. Ebling; Clemens Eiche; Michael Fiederle; Wolfgang Joerger; M. Laasch; Manfred Salk; Ralf Schwarz; Klaus-Werner Benz

doi:10.1117/12.211895

15 June 1995 Resistivity and deep-level investigations of detector-grade CdTe: a comparison of different growth techniques

Dirk G. Ebling, Clemens Eiche, Michael Fiederle, Wolfgang Joerger, M. Laasch, Manfred Salk, Ralf Schwarz, Klaus-Werner Benz

Author Affiliations +

Proceedings Volume 2519, X-Ray and Ultraviolet Sensors and Applications; (1995) https://doi.org/10.1117/12.211895
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

The electrical properties of semi-insulating CdTe crystals were characterized considering the application of the material as a room temperature radiation detector. Requirement for the detector application is a high resistivity material which is achieved by the compensation of shallow levels by deep donors in the middle of the band gap. These deep donors are obtained by doping the CdTe crystals with titanium or vanadium or by the influence of chlorine and intrinsic defects like the antisite defect. The energies of the deep levels are within the range of 0.31 eV and 0.95 eV determined by photoinduced current spectroscopy and admittance measurements. To calculate the compensation effects we applied a model originally developed for semi-insulating GaAs. To form detectors with a high local resolution, homogeneous material is needed. Homogeneity was tested by time dependent charge measurements. While CdTe:Cl showed variations of about 20% other high resistivity materials could vary up to one order of magnitude across one wafer. The variation of resistivity in CdTe crystals could be attributed to the crystal growth by a combined segregation-compensation model.

Citation Download Citation

Dirk G. Ebling, Clemens Eiche, Michael Fiederle, Wolfgang Joerger, M. Laasch, Manfred Salk, Ralf Schwarz, and Klaus-Werner Benz "Resistivity and deep-level investigations of detector-grade CdTe: a comparison of different growth techniques", Proc. SPIE 2519, X-Ray and Ultraviolet Sensors and Applications, (15 June 1995); https://doi.org/10.1117/12.211895

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available