Paper
22 September 1995 Fast galvanomagnetic switching in the semiconductor dynamic gratings
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Abstract
We suggest to use Lorentz force in crossed electric and magnetic fields for fast shifting of electron-hole gratings, induced by two interfering beams in semiconductors. Energy switching between coupling beams and possibility of electrical switching is described.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nickolai V. Kukhtarev and H. John Caulfield "Fast galvanomagnetic switching in the semiconductor dynamic gratings", Proc. SPIE 2532, Application and Theory of Periodic Structures, (22 September 1995); https://doi.org/10.1117/12.221232
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KEYWORDS
Switching

Semiconductors

Magnetic semiconductors

Crystals

Silicon

Magnetism

Absorption

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