Efforts to control the EUV reflectance degradation of sputtered SiC films

Dan Schwarcz; Ritva A. M. Keski-Kuha

doi:10.1117/12.225298

23 October 1995 Efforts to control the EUV reflectance degradation of sputtered SiC films

Dan Schwarcz, Ritva A. M. Keski-Kuha

Proceedings Volume 2543, Silicon Carbide Materials for Optics and Precision Structures; (1995) https://doi.org/10.1117/12.225298
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

There is a need for thin optical coatings that can be produced at low temperatures and have a high reflectance in the extreme ultraviolet (EUV). Currently, the best such material is silicon carbide (SiC) sputtered onto optical surfaces from targets of beta-SiC which were produced by chemical vapor deposition (CVD). The EUV reflectance of these films, however, is not as high as that of polished CVD SiC, and in addition it degrades with time. In this study the nonreversible reflectance degradation is quantified, and efforts to ameliorate it via ion-assisted deposition (IAD) and other techniques are detailed.

Citation Download Citation

Dan Schwarcz and Ritva A. M. Keski-Kuha "Efforts to control the EUV reflectance degradation of sputtered SiC films", Proc. SPIE 2543, Silicon Carbide Materials for Optics and Precision Structures, (23 October 1995); https://doi.org/10.1117/12.225298

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