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1 September 1995 Charge transfer efficiency modeling/measurements as function of CCD pixel rate
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Abstract
We have developed a charge transport model for predicting the effects on Charge Transfer Efficiency (CTE) of Charge Coupled Devices (CCDs) as functions of number of transfers, pixel charge flow rate, and magnitude in the CCD's vertical and horizontal charge transport mediums. The model uses carrier lifetime and mobility criteria to establish pixel speed arguments and limitations for various CCD architectures. The model is compared with experimental measurements obtained using strobed single pixel illumination and a variant of the deferred charge tail technique while independently varying the CCD pixel rates for both the vertical and horizontal readout phases. The generic model is discussed and applied to specific real CCDs. Agreement between predicted performance and actual measured performance is presented.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George J. Yates, Robert A. Gallegos, Claudine R. Pena, and Paul A. Zagarino "Charge transfer efficiency modeling/measurements as function of CCD pixel rate", Proc. SPIE 2549, Ultrahigh- and High-Speed Photography, Videography, and Photonics '95, (1 September 1995); https://doi.org/10.1117/12.218304
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