Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation

Frederic Rothan; Isabelle Bischoff; Gilles Chammings; Michel Ravetto; Michel Vilain; Philippe Galdemard; Rene Jouan; Pierre-Olivier Lagage; Pierre Masse

doi:10.1117/12.218279

8 September 1995 Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation

Frederic Rothan, Isabelle Bischoff, Gilles Chammings, Michel Ravetto, Michel Vilain, Philippe Galdemard, Rene Jouan, Pierre-Olivier Lagage, Pierre Masse

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Proceedings Volume 2552, Infrared Technology XXI; (1995) https://doi.org/10.1117/12.218279
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

New gallium-doped silicon 128 by 192 element arrays have been achieved at CEA-LETI-LIR (Infrared Laboratory) for imaging in the 8 - 14 micrometer spectral range. This program is in keeping with the previous detector development for the ISOCAM camera (32 by 32 element arrays) and for ground-based observation (64 by 64 element arrays). The main features of the new detectors are: a pitch of 75 micrometer which leads to 10 by 15 mm² chip dimensions, two selectable storage capacitors (respectively 0.1 and 0.5 pF), a DVR readout circuit achieved in an NMOS silicon line with 1.5 micrometer design rules. The main electro- optical performances are the following: a peak responsivity of 4.0 A/W, a noise of 58 fA rms over the 0.1 - 128 Hz spectral range which is very close to the BLIP noise, and a corresponding noise equivalent power of 1.4 10^-14 W.

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Frederic Rothan, Isabelle Bischoff, Gilles Chammings, Michel Ravetto, Michel Vilain, Philippe Galdemard, Rene Jouan, Pierre-Olivier Lagage, and Pierre Masse "Development of Si:Ga/DVR 128 x 192 element arrays for 8- to 14-um observation", Proc. SPIE 2552, Infrared Technology XXI, (8 September 1995); https://doi.org/10.1117/12.218279

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