CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes

Martin Bruder; Heinrich Figgemeier; L. Palm; Johann Ziegler; Horst Maier

doi:10.1117/12.218181

1 September 1995 CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes

Martin Bruder, Heinrich Figgemeier, L. Palm, Johann Ziegler, Horst Maier

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218181
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

An etch process was developed to determine the dislocation density on <111>B - Hg_1-xCd_xTe-epilayers grown by liquid phase epitaxy from a tellurium-rich solution. A correlation between the etch pit density and the Cd_1-yZn_yTe-substrate material properties is found. Additionally the yield of photovoltaic diode performance strongly depends on the value of these measured dislocation densities. This method acts as a pass/fail evaluation for the epilayers used in our infrared device fabrication.

Citation Download Citation

Martin Bruder, Heinrich Figgemeier, L. Palm, Johann Ziegler, and Horst Maier "CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218181

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