Luminescent properties of nitrogen doped gap semiconductor studied with photothermal deflection spectroscopy

Mianyu Dong; Zuchang Ding; Limin Tong; Yihua Shao

doi:10.1117/12.218190

1 September 1995 Luminescent properties of nitrogen doped gap semiconductor studied with photothermal deflection spectroscopy

Mianyu Dong, Zuchang Ding, Limin Tong, Yihua Shao

Author Affiliations +

Proceedings Volume 2554, Growth and Characterization of Materials for Infrared Detectors II; (1995) https://doi.org/10.1117/12.218190
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

Theoretical analysis of the relation between amplitude of photothermal signals in nonuniform samples and modulating frequency used photothermal deflection spectroscopy (PDS) shows: compared with the curve of logarithmic amplitude of PDS signals of uniform substrate materials, the curve inclination of logarithmic amplitude via frequency omega increases when absorptive index of p-layer is smaller than that of n-layer in nonuniform Gap:N, otherwise, it decreases. By comparing this result with experimental results, we can obtain concentration distribution of nitrogen in p-layer and n-layer of Gap:N. Meanwhile, absorption spectra under different modulating frequencies at room temperature have been measured, and the possibility of measurement of optical and thermal characteristics at different depth of nonuniform samples under various modulating frequencies is indicated. In a word, this paper suggests a method to measure internal characteristics of nonuniform materials without damage, which has been verified in experiment.

Citation Download Citation

Mianyu Dong, Zuchang Ding, Limin Tong, and Yihua Shao "Luminescent properties of nitrogen doped gap semiconductor studied with photothermal deflection spectroscopy", Proc. SPIE 2554, Growth and Characterization of Materials for Infrared Detectors II, (1 September 1995); https://doi.org/10.1117/12.218190

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