Far-infrared response of high-purity GaAs photoconductors

Jam Farhoomand; Robert E. McMurray Jr.; Eugene E. Haller; Elisabeth Bauser; I. Silier

doi:10.1117/12.224215

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13 October 1995 Far-infrared response of high-purity GaAs photoconductors

Jam Farhoomand, Robert E. McMurray Jr., Eugene E. Haller, Elisabeth Bauser, I. Silier

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Proceedings Volume 2558, Millimeter and Submillimeter Waves II; (1995) https://doi.org/10.1117/12.224215
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

In this paper we report the results of an extensive study on the far-infrared photoconductivity of high purity n-type GaAs. The crystal, which was grown at Max Plank Institute using liquid- phase epitaxy, exhibited the fine structures of the excited state transitions of the residual shallow level impurities. The major peak in the spectral response belongs to the 1s-2p transition, with its responsivity about thirty five times higher than the continuum. At 3.4K detector temperature, 625 mV bias, and 100 Hz chopping frequency the detector responsivity at 35.4 cm^-1 (279 micrometers ) was measured to be 0.017 A/W. Under these same conditions, the NEP was 5.9 X 10^-14 W/(root)Hz. The dark current at 25 mV bias was 5.6 X 10^-14 A.

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Jam Farhoomand, Robert E. McMurray Jr., Eugene E. Haller, Elisabeth Bauser, and I. Silier "Far-infrared response of high-purity GaAs photoconductors", Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995); https://doi.org/10.1117/12.224215

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