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13 October 1995 Far-infrared response of high-purity GaAs photoconductors
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Abstract
In this paper we report the results of an extensive study on the far-infrared photoconductivity of high purity n-type GaAs. The crystal, which was grown at Max Plank Institute using liquid- phase epitaxy, exhibited the fine structures of the excited state transitions of the residual shallow level impurities. The major peak in the spectral response belongs to the 1s-2p transition, with its responsivity about thirty five times higher than the continuum. At 3.4K detector temperature, 625 mV bias, and 100 Hz chopping frequency the detector responsivity at 35.4 cm-1 (279 micrometers ) was measured to be 0.017 A/W. Under these same conditions, the NEP was 5.9 X 10-14 W/(root)Hz. The dark current at 25 mV bias was 5.6 X 10-14 A.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jam Farhoomand, Robert E. McMurray Jr., Eugene E. Haller, Elisabeth Bauser, and I. Silier "Far-infrared response of high-purity GaAs photoconductors", Proc. SPIE 2558, Millimeter and Submillimeter Waves II, (13 October 1995); https://doi.org/10.1117/12.224215
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