High-power, high-efficiency, and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers

Keisuke Kojima; Marlin W. Focht; Joseph M. Freund; J. Michael Geary; Kenneth G. Glogovsky; Gregory D. Guth; Robert F. Karlicek Jr.; Lars C. Luther; George J. Przybylek; C. Lewis Reynolds Jr.; D. M. Romero; L. E. Smith; Daniel V. Stampone; J. W. Stayt Jr.; Venkat S. Swaminathan; Frank S. Walters; Kevin Thomas Campbell; J. A. Grenko; Jean Flamand; Michael G Palin

doi:10.1117/12.230070

15 January 1996 High-power, high-efficiency, and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers

Keisuke Kojima, Marlin W. Focht, Joseph M. Freund, J. Michael Geary, Kenneth G. Glogovsky, Gregory D. Guth, Robert F. Karlicek Jr., Lars C. Luther, George J. Przybylek, C. Lewis Reynolds Jr., D. M. Romero, L. E. Smith, Daniel V. Stampone, J. W. Stayt Jr., Venkat S. Swaminathan, Frank S. Walters, Kevin Thomas Campbell, J. A. Grenko, Jean Flamand, Michael G Palin

Author Affiliations +

Proceedings Volume 2610, Laser Diode Chip and Packaging Technology; (1996) https://doi.org/10.1117/12.230070
Event: Photonics East '95, 1995, Philadelphia, PA, United States

Abstract

In order to meet the increasing market needs for uncooled lasers for such applications as fiber- in-the-loop, high efficiency, high power, and highly reliable 1.3 micrometer uncooled InGaAsP/InP strained multi-quantum well Fabry-Perot lasers were fabricated with 50 mm wafer processing. Slope efficiency as high as 0.39 W/A and peak power as high as 46 mW at 85 degrees Celsius was obtained by optimizing the device structure for high temperature operation. We have also demonstrated excellent uniformity and reproducibility over 6 wafers. Reliability was also shown to be very good. More than 10,000 chips sites are available on a 50 mm wafer, and the cost is expected to be low. Because of the high performance, these lasers are expected to be used for various applications.

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Keisuke Kojima, Marlin W. Focht, Joseph M. Freund, J. Michael Geary, Kenneth G. Glogovsky, Gregory D. Guth, Robert F. Karlicek Jr., Lars C. Luther, George J. Przybylek, C. Lewis Reynolds Jr., D. M. Romero, L. E. Smith, Daniel V. Stampone, J. W. Stayt Jr., Venkat S. Swaminathan, Frank S. Walters, Kevin Thomas Campbell, J. A. Grenko, Jean Flamand, and Michael G Palin "High-power, high-efficiency, and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers", Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); https://doi.org/10.1117/12.230070

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