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8 December 1995 Manufacturing and inspection of OPC and PSM masks
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With optical lithography prevailing into the year 2000, super-resolution processes pose a multitude of new challenges to the lithographer. Isolated to nested feature bias calls for 'pre- distorting' the photomask to compensate for proximity effects and print and etch biases in the mask and wafer manufacturing process. OPC (optical proximity correction) techniques have become a reality for sub-halfmicron lithography, and have initiated many discussions looking at the manufacturability of OPC masks. Regaining the lost DOF (depth of focus) due to ever shorter printing wavelength, and increasing yields by expanding process latitude have many IC manufacturers looking into PSMs (phase shift masks) as a viable but expensive enhancement technique for several [2-6] layers of the total [18-26] device mask set. This paper addresses manufacturability issues of various combinations of 'enhancement' masks.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang Staud, Karen Huang, Patricia D. Beard, Ofer Hebron, and Yair Eran "Manufacturing and inspection of OPC and PSM masks", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995);

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