Mix-and-match lithography technology on 6-in. wafers for nanofabrication

Shyi-Long Shy; Tien Sheng Chao; C. H. Chu; Tan Fu Lei; Kazumitsu Nakamura; Wen-An Loong; Chun-Yen Chang

doi:10.1117/12.228194

8 December 1995 Mix-and-match lithography technology on 6-in. wafers for nanofabrication

Shyi-Long Shy, Tien Sheng Chao, C. H. Chu, Tan Fu Lei, Kazumitsu Nakamura, Wen-An Loong, Chun-Yen Chang

Proceedings Volume 2621, 15th Annual BACUS Symposium on Photomask Technology and Management; (1995) https://doi.org/10.1117/12.228194
Event: 15th Annual BACUS Symposium on Photomask Technology and Management '95, 1995, Santa Clara, CA, United States

Abstract

This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.

Citation Download Citation

Shyi-Long Shy, Tien Sheng Chao, C. H. Chu, Tan Fu Lei, Kazumitsu Nakamura, Wen-An Loong, and Chun-Yen Chang "Mix-and-match lithography technology on 6-in. wafers for nanofabrication", Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); https://doi.org/10.1117/12.228194

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