Numerical simulation of gate turn-off (GTO) light-emitting thyristors

Valeri Korobov; Vladimir V. Mitin; Zinovi S. Gribnikov

doi:10.1117/12.216830

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18 August 1995 Numerical simulation of gate turn-off (GTO) light-emitting thyristors

Valeri Korobov, Vladimir V. Mitin, Zinovi S. Gribnikov

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Proceedings Volume 2622, Optical Engineering Midwest '95; (1995) https://doi.org/10.1117/12.216830
Event: Optical Engineering Midwest '95, 1995, Chicago, IL, United States

Abstract

Results of 2D numerical simulation of a four-terminal light emitting thyristor in the regime of incomplete turn-off are presented. This regime is characterized by the negative gate current, which is insufficient to turn the device off. A part of the middle p-n junction is reverse biased and blocks the current, whereas the remaining part of the structure is highly conducting and light-emitting. The size of the light-emitting area and the light intensity in this region can be controlled using small gate signals. Gates make it possible also to control the position of the light-emitting region. The utilization of incomplete turn-off principle can be used for light intensity modulation and switching purposes.

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Valeri Korobov, Vladimir V. Mitin, and Zinovi S. Gribnikov "Numerical simulation of gate turn-off (GTO) light-emitting thyristors", Proc. SPIE 2622, Optical Engineering Midwest '95, (18 August 1995); https://doi.org/10.1117/12.216830

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