Effects of various RIE process-induced damages on MOSFET characteristics

Byoung Woon Min; L. K. Han; Atul B. Joshi; R. Mann; L. Chung; Dim-Lee Kwong

doi:10.1117/12.221446

22 September 1995 Effects of various RIE process-induced damages on MOSFET characteristics

Byoung Woon Min, L. K. Han, Atul B. Joshi, R. Mann, L. Chung, Dim-Lee Kwong

Proceedings Volume 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis; (1995) https://doi.org/10.1117/12.221446
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

A systematic study of the degradation of MOSFETs performance and reliability caused by various reactive ion etching (RIE) process steps are conducted. It is found that the polysilicon RIE process significantly increases the electron trapping as an active damage, thus causing higher initial V_t and lower initial G_m of NMOSFETs. In addition, while NMOSFETs with via antenna structures show largest RIE- induced degradation compared to other antenna devices. Our results also indicate Fowler-Nordheim stress results are well correlated with those from hot carrier stressing for monitoring RIE-induced latent damages, suggesting that Fowler-Nordheim stress is an efficient method to monitor RIE damage in a short time.

Citation Download Citation

Byoung Woon Min, L. K. Han, Atul B. Joshi, R. Mann, L. Chung, and Dim-Lee Kwong "Effects of various RIE process-induced damages on MOSFET characteristics", Proc. SPIE 2635, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis, (22 September 1995); https://doi.org/10.1117/12.221446

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