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15 September 1995 Parametral dependence of bilevel-interconnect formation in GaAs ICs/MMICs
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The formation of multilevel interconnects in GaAs MMIC fabrication depends mainly on the adhesion of the interconnect metals with the intermediate dielectric and with the substrate. The metal lines in our experimental study were formed by depositing multilayer films by rf sputtering technique over spin-coated polyimide and Plasma Enhanced Chemical Vapor Deposited (PECVD) silicon nitride (Si3Nx). It is observed that samples with a poor adhesion between the second level metal and Si3Nx show bubbling of blistering in the metal layer when subjected to subsequent high temperature cycles in the fabrication process. It is also found that the choice of certain metal schemes develops a stress between the first level metal and GaAs at the bond pads which peel off at the time of bonding. The present experimental study was undertaken to avoid the loss of the circuit at such advanced stages of fabrication like bonding or second level interconnect formation. The study brings out the dependence of the bondability of the circuit bond pads and the formation of the interconnect lines on the rf sputtering parameters, the premetallization treatment, the choice of the multilayer metal schemes and the thickness of the metals in the multilayer metallization.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seema Vinayak, B. K. Sehgal, G. Sai Sarvanan, Sindhu Dayal, D. S. Rawal, Akshay A. Naik, R. Gulati, and I. Chandra "Parametral dependence of bilevel-interconnect formation in GaAs ICs/MMICs", Proc. SPIE 2636, Microelectronic Device and Multilevel Interconnection Technology, (15 September 1995);

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