Optical studies of fluorocarbon film formation by a high-density plasma etcher

Ronald A. Carpio; Burt W. Fowler; Thien T. Nguyen

doi:10.1117/12.221208

18 September 1995 Optical studies of fluorocarbon film formation by a high-density plasma etcher

Ronald A. Carpio, Burt W. Fowler, Thien T. Nguyen

Proceedings Volume 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II; (1995) https://doi.org/10.1117/12.221208
Event: Microelectronic Manufacturing '95, 1995, Austin, TX, United States

Abstract

Fourier-transform infrared spectroscopy and spectroscopic ellipsometry are used to determine the composition and thickness of the fluorocarbon polymer formed during etching of silicon dioxide films on silicon substrates using C₂F₆ in a high- density plasma. The fluorocarbon polymer is characterized as the key process parameters are systematically varied.

Citation Download Citation

Ronald A. Carpio, Burt W. Fowler, and Thien T. Nguyen "Optical studies of fluorocarbon film formation by a high-density plasma etcher", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221208

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