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18 September 1995 Surface photovoltage analysis of iron contamination in silicon processing and the relation to gate oxide integrity
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Abstract
Surface photovoltage (SPV), a contactless optical technique for measuring minority carrier lifetime, is used to quantify the relationship between silicon iron contamination level and thin gate oxide integrity. Iron concentration levels in the range of 1 X 1010 cm-3 to 5 X 1013 cm-3 are evaluated for oxide thicknesses of 8 to 20 nm. Ramp voltage electrical breakdown and time dependant dielectric breakdown measurement on the iron contaminated gate oxide capacitors are reported. Distinct iron contamination threshold limits based on defect density and gate oxide integrity evaluate cleaning efficiencies and metallic cross contamination effects during thermal processing contamination. Iron-silicide precipitation kinetics are investigated by the lifetime analysis procedure.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Worth B. Henley "Surface photovoltage analysis of iron contamination in silicon processing and the relation to gate oxide integrity", Proc. SPIE 2638, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing II, (18 September 1995); https://doi.org/10.1117/12.221194
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