Translator Disclaimer
Paper
19 September 1995 Advanced silicon etching using high-density plasmas
Author Affiliations +
Proceedings Volume 2639, Micromachining and Microfabrication Process Technology; (1995) https://doi.org/10.1117/12.221279
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
High density plasmas are beginning to dominate the market for advanced anisotropic silicon etching for MEMS applications. This paper looks at the reasons behind this dominance for high etch rate, deep anisotropic etching. A discussion of anisotropic etch mechanisms highlights the need for sidewall passivation to meet these requirements. Results are presented of a novel room temperature advanced silicon etch process: >= 2 micrometers /min; >= 70:1 selectivity to resist (and >= 150:1 to oxide); up to 30:1 aspect ratio; 500 micrometers depth capability; using a non-toxic, non-corrosive environmentally acceptable fluorine-based chemistry.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jy K. Bhardwaj and Huma Ashraf "Advanced silicon etching using high-density plasmas", Proc. SPIE 2639, Micromachining and Microfabrication Process Technology, (19 September 1995); https://doi.org/10.1117/12.221279
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top