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26 September 1995 Effects of doping on the dynamic mechanical response of semiconductor cantilevers to electrostatic forces
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Proceedings Volume 2640, Microlithography and Metrology in Micromachining; (1995) https://doi.org/10.1117/12.222652
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
The theory of electrostatic forces on doped semiconductor cantilevers, and their dynamic, mechanical response, is presented. Effects on constant, and time-varying, voltages between the cantilever and a mechanically fixed reference potential are studied. Surface changes are considered, since they can screen electrostatic forces significantly. The results show work function differences between the cantilever and the reference electrode must be included in calculating the mechanical response of semiconductor cantilevers to electrostatic forces. Surface charges, as long as their sheet densities are below 1011 cm-2, will not present especial difficulties for either analysis or behavior. Small-signal analysis of the mechanical response is complicated by both large-signal applied biases, giving rise to displacement currents, and penetration of the electric field into non-degenerate semiconductors.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Albert K. Henning "Effects of doping on the dynamic mechanical response of semiconductor cantilevers to electrostatic forces", Proc. SPIE 2640, Microlithography and Metrology in Micromachining, (26 September 1995); https://doi.org/10.1117/12.222652
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