Paper
26 September 1995 Thin metal film thermal microsensors
Yuli Vladimirsky, N. Rau, Harish M. Manohara, Kevin J. Morris, J. Michael Klopf, Gina M. Calderon, Olga Vladimirsky
Author Affiliations +
Proceedings Volume 2640, Microlithography and Metrology in Micromachining; (1995) https://doi.org/10.1117/12.222647
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
Design, fabrication, and testing of thermal micro-sensors suitable for miniature and microscopic systems, for application on thin films (free standing or on substrates) as temperature sensors are presented in this paper. The sensors utilize the electrical resistivity temperature dependence of a metal. Using micro-lithography methods, several sets of gold resistors were fabricated in the form of flat 30 to 250 nm thick wires, 7 - 10 micrometers wide, and several cm long in a serpentine shape covering approximately 1.0 mm2. These sensors have demonstrated better than 0.001 degree(s) C sensitivity. The electrical resistivity and its thermal coefficient of a thin gold metal film were compared with those of bulk material. Temperature measurements on Si wafers were performed in situations corresponding to x-ray lithography exposure conditions suitable for micromachining. The temperature rise and relaxation time of a silicon wafer during x-ray exposure were measured in vacuum and different He gas pressures.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuli Vladimirsky, N. Rau, Harish M. Manohara, Kevin J. Morris, J. Michael Klopf, Gina M. Calderon, and Olga Vladimirsky "Thin metal film thermal microsensors", Proc. SPIE 2640, Microlithography and Metrology in Micromachining, (26 September 1995); https://doi.org/10.1117/12.222647
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KEYWORDS
Resistors

Semiconducting wafers

Gold

Resistance

Temperature metrology

Silicon

Thin films

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