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26 September 1995 Very high aspect ratio wafer-free silicon micromechanical structures
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Proceedings Volume 2640, Microlithography and Metrology in Micromachining; (1995) https://doi.org/10.1117/12.222638
Event: Micromachining and Microfabrication, 1995, Austin, TX, United States
Abstract
We report on the design and fabrication of a very high aspect ratio, entirely released single crystal silicon (SCS) micro-cantilever `on-a-frame' for z-motion applications. Motions of the micro-cantilever in the x-, y- and z-directions can be independently controlled by varying the spring constants of the SCS mechanical beams from about 103 N/m to approximately 109 N/m. We develop a new technology called Scream for High Aspect Ratio Proportions which increases the aspect ratio of the Single Crystal Reactive Etching And Metallization fabrication process. As an example, this novel technique based on a sequence of reactive ion etchings and thermal oxidations offers the capability of building a high aspect ratio wafer-free micro-cantilever `on-a-frame' with vertical dimensions exceeding 100 micrometers . The releasable grid consists of a large surface-to-volume ratio square-shaped `frame- within-a-frame' structure connected by z-motion springs. We have achieved intrinsic stress- based vertical deflections ranging from 60 micrometers to 125 micrometers with respect to the substrate floor for the large surface area (1 mm2) inner frame forming the z-stage. At the end of the fabrication process, the micro-cantilever `on-a-frame' can be fully released from the SCS substrate, thus resulting in a z-motion stage which can be entirely lifted off the wafer to be integrated with other micromechanical actuators.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ali Jazairy and Noel C. MacDonald "Very high aspect ratio wafer-free silicon micromechanical structures", Proc. SPIE 2640, Microlithography and Metrology in Micromachining, (26 September 1995); https://doi.org/10.1117/12.222638
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