X-ray diffraction optics of the submicron surface layers

Igor M. Fodchuk; A. M. Raransky; Andrij V. Evdokimenko

doi:10.1117/12.226722

10 November 1995 X-ray diffraction optics of the submicron surface layers

Igor M. Fodchuk, A. M. Raransky, Andrij V. Evdokimenko

Proceedings Volume 2647, International Conference on Holography and Correlation Optics; (1995) https://doi.org/10.1117/12.226722
Event: International Conference on Holography and Correlation Optics, 1995, Chernivsti, Ukraine

Abstract

The scheme of x-ray diffraction on reflection for research of layers structure of single crystals after various kinds of external treatment is used. On a series of diffraction curves the profiles of distribution of deformations in thin subsurface areas of InSb and CdTe crystals irradiated by high-energy electrons and B ions are constructed. The given work demonstrates the opportunities of the skew asymmetric scheme of x-ray diffraction on reflection as in topographical, and in two crystal spectrometer scheme in research of structural changes in subsurface layers of various single crystal compounds after ion and electron irradiation.

Citation Download Citation

Igor M. Fodchuk, A. M. Raransky, and Andrij V. Evdokimenko "X-ray diffraction optics of the submicron surface layers", Proc. SPIE 2647, International Conference on Holography and Correlation Optics, (10 November 1995); https://doi.org/10.1117/12.226722

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available