Diagnostics of Si-Ge alloys by spectroellipsometry

Vladimir G. Litovchenko; Sergey I. Frolov; Nickolai I. Klyui; B. N. Shkarban; V. A. Mitus; D. Krueger

doi:10.1117/12.226206

3 November 1995 Diagnostics of Si-Ge alloys by spectroellipsometry

Vladimir G. Litovchenko, Sergey I. Frolov, Nickolai I. Klyui, B. N. Shkarban, V. A. Mitus, D. Krueger

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226206
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

In the framework of virtual crystal approximation using the empirical pseudopotential theory optical transitions of Si_1-XGe_X have been calculated. The effects of hydrostatic and uniaxial stress, and alloy stoichiometry on the optical gaps were investigated. Optical constant spectra for the Si_1-XGe_X alloys of different content have been measured by spectroscopic ellipsometer. Strain relaxation in annealed Si_1-XGe_X layers has been observed. From the comparison of measured direct optical transition energy E1 with the calculated one the value of lattice deformation in the pseudomorphic Si_1-XGe_X layer has been determined. Since the mechanical stress and material composition affect the distinctive behavior of different optical transitions it allows us to put forward a spectral measurement technique for determination of crystal lattice strain and alloy parameter X simultaneously.

Citation Download Citation

Vladimir G. Litovchenko, Sergey I. Frolov, Nickolai I. Klyui, B. N. Shkarban, V. A. Mitus, and D. Krueger "Diagnostics of Si-Ge alloys by spectroellipsometry", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226206

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