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3 November 1995 New photoacoustic mean for the determination of surface recombination velocity in piezocrystals
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226138
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
A theoretical analysis is given of the surface recombination effect on laser generation of longitudinal acoustic pulses in piezocrystals. The acoustic pulses are excited through the inverse piezoelectric effect as a result of the electric fields induced by the spatial separation of photogenerated electrons and holes. Two regimes of dynamics of nonequilibrium electron-hole plasma are considered: the regime of independent motion of opposite-sign charge carriers and one of their ambipolar diffusion. The possibility of generating acoustic pulses with a duration equal to the surface recombination time is predicted. It is shown that the profile of pulse of longitudinal strain is essentially transformed as the surface recombination rate increases. Being based on these facts, a new photoacoustic mean is suggested to determine the high surface recombination velocity (s approximately equals 106 cm/s) in piezocrystals.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vitalyi E. Gusev and Ludmila Makarova "New photoacoustic mean for the determination of surface recombination velocity in piezocrystals", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226138
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