Paper
20 July 1981 Photovoltaic HgCdTe Hybrid Performance
A. H. Lockwood, R. J. Corralejo, M. H. Kalisher, M. Lanir, M. L. Laucks, E. M. Norton, K. J. Riley, J. R. Toman
Author Affiliations +
Proceedings Volume 0267, Staring Infrared Focal Plane Technology; (1981) https://doi.org/10.1117/12.959918
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Abstract
Second generation infrared imaging systems require high density focal plane arrays for staring applications. To meet this need, a focal plane structure using HgCdTe photodiodes for detectors and Si CCDs for signal processing has been developed. Although conventional ion-implanted hybrid arrays have successfully been interfaced to CCD multiplexers, hybrid arrays fabricated on liquid phase epitaxial (LPE) layers offer some inherent advantages with respect to performance, processing and yields. It has been determined that heterostructure diodes fabricated by a Hg infinite melt LPE technique give superior performance relative to conventional ion-implanted devices. The devices exhibit high RoA products and good compositional uni formity. Data is presented on devices fabricated for both 8 to 12 μm and 3 to 5 μm applications.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. H. Lockwood, R. J. Corralejo, M. H. Kalisher, M. Lanir, M. L. Laucks, E. M. Norton, K. J. Riley, and J. R. Toman "Photovoltaic HgCdTe Hybrid Performance", Proc. SPIE 0267, Staring Infrared Focal Plane Technology, (20 July 1981); https://doi.org/10.1117/12.959918
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Cited by 3 scholarly publications.
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KEYWORDS
Mercury cadmium telluride

Photovoltaics

Heterojunctions

Liquid phase epitaxy

Charge-coupled devices

Diodes

Infrared technology

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