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12 April 1996 High-power high-T0 native oxide stripe-geometry 980-nm laser diodes
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We present results of an experimental investigation of the temperature sensitivity of separate confinement strained InGaAs/GaAs/AlxGa1-xAs quantum well single-mode and multimode high power laser diodes (HPLDs). The HPLDs have been fabricated by use of MBE material and a 'wet' thermal oxidation process. Due to the high carrier confinement in the structure with two quantum wells (DQW) and Al-content x greater than 0.7 in the cladding layers an extremely high characteristic temperature T0 equals 350 K for broad area and T0 of 400 K around room temperature for single mode HPLDs with extremely low threshold current density were obtained. In spite of the high Al-content in the cladding layers (0.5 less than x less than 0.8) a very high catastrophic optical damage (COD) level (greater than 10 MW/cm2) and lifetimes of more than 10 kh at 100 mW (T equals 50 degrees Celsius) have been observed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Herbert Burkhard, Valeri Piataev, and Winfried Schlapp "High-power high-T0 native oxide stripe-geometry 980-nm laser diodes", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996);


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