InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um

Hong K. Choi; George W. Turner; M. J. Manfra; M. K. Connors; Frederick P. Herrmann; Arvind Baliga; Neal G. Anderson

doi:10.1117/12.237668

12 April 1996 InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um

Hong K. Choi, George W. Turner, M. J. Manfra, M. K. Connors, Frederick P. Herrmann, Arvind Baliga, Neal G. Anderson

Proceedings Volume 2682, Laser Diodes and Applications II; (1996) https://doi.org/10.1117/12.237668
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The current status of InAsSb/InAlAsSb quantum-well (QW) lasers emitting between 3 and 4 micrometer is described. QW lasers grown on GaSb substrates, with emission wavelengths at approximately 3.9 micrometer, have operated pulsed up to 165 K. At 80 K, cw power of 30 mW/facet has been obtained. Ridge-waveguide lasers have operated cw up to 128 K. QW lasers grown on InAs have emission wavelengths between 3.2 and 3.55 micrometer. Broad- stripe lasers have operated pulsed up to 225 K and ridge-waveguide lasers have operated cw to 175 K. Theoretical analysis of the laser gain using a 6 by 6 k (DOT) p model to calculate the valence subband structure is reported.

Citation Download Citation

Hong K. Choi, George W. Turner, M. J. Manfra, M. K. Connors, Frederick P. Herrmann, Arvind Baliga, and Neal G. Anderson "InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); https://doi.org/10.1117/12.237668

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