Internal quantum effeciency measurements of GaInP quantum well laser material using liquid contact luminescence

Chia-Fu Hsu; Craig C. Largent; Jeong Seok O; C. L. Young; Peter S. Zory; David P. Bour

doi:10.1117/12.237650

12 April 1996 Internal quantum effeciency measurements of GaInP quantum well laser material using liquid contact luminescence

Chia-Fu Hsu, Craig C. Largent, Jeong Seok O, C. L. Young, Peter S. Zory, David P. Bour

Author Affiliations +

Proceedings Volume 2682, Laser Diodes and Applications II; (1996) https://doi.org/10.1117/12.237650
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

A liquid contact luminescence (LCL) technique is described. LCL spectral data obtained by current injection through two GaInP quantum well laser wafers are utilized to determine the internal quantum efficiency ratio for the two wafers. This measured ratio is shown to be in good agreement with the internal quantum efficiency ratio for the two wafers as determined from conventional laser slope efficiency vs. cavity length measurements.

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Chia-Fu Hsu, Craig C. Largent, Jeong Seok O, C. L. Young, Peter S. Zory, and David P. Bour "Internal quantum effeciency measurements of GaInP quantum well laser material using liquid contact luminescence", Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); https://doi.org/10.1117/12.237650

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