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10 April 1996 High-power laser diodes at wavelength 1.06 μm grown by MOCVD
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In this paper MOCVD epitaxial growth of InGaAs/GaAs strained quantum well lasers lasing at (lambda) equals 1.06 mkm will be discussed. Series of Single Quantum Well Separate Confinement Heterostructures were grown with different quantum well thickness d and active layer InxGa1-xAs composition x. Luminescence characteristics were investigated with approaching of active layer thickness to critical value. At the near critical thickness of active layer splitting of the electroluminescence peak was observed. Also steplike changing of emitting wavelength was detected during measurements of luminescence wavelength versus active layer thickness d. Emitting characteristics and laser diodes degradation character were explored. Express selection criteria of laser structures making possible to manufacture laser diodes with lifetime more than 1000 hours at operation power 1 Watt in cw multimode regime are discussed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander A. Chelny, Igor Dmitrievich Zalevsky, Peter V. Bulaev, and M. Sh. Kobyakova "High-power laser diodes at wavelength 1.06 μm grown by MOCVD", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996);

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