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10 April 1996 Optical mirror facet strength of cw-operated separate confinement heterostructure laser diodes
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Abstract
In this paper we present the calculation of local mirror facet overheating of the SCH laser diode active region. It is shown that optical strength of the mirror facet prior to optical damage depends on optical confinement factor ((Gamma) -factor) and thickness of the active region layer adjacent to surface (`dead layer') where nonradiative recombination rate is much higher. Detailed investigations of local mirror facet temperature and optical strength of mirror facet in both Al-containing (AlGaAs/GaAs, InGaAs/AlGaAs/GaAs) and Al-free (InGaAsP/GaAs) single quantum well laser diodes were carried out. Experimental results are in good agreement with calculations. It is shown that optical strength of mirror facet for laser heterostructure can be derived from the behavior of local mirror facet overheating of laser diodes.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolay I. Katsavets, Daniil A. Livshits, and Ilya S. Tarasov "Optical mirror facet strength of cw-operated separate confinement heterostructure laser diodes", Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); https://doi.org/10.1117/12.237686
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