Monolithically integrated high-speed high-power diffraction-limited semiconductor sources for space telecommunications

Jean-Marc Verdiell; Robert J. Lang; Kenneth M. Dzurko; Stephen O'Brien; Jules S. Osinski; David F. Welch; Donald R. Scifres

doi:10.1117/12.236938

1 April 1996 Monolithically integrated high-speed high-power diffraction-limited semiconductor sources for space telecommunications

Jean-Marc Verdiell, Robert J. Lang, Kenneth M. Dzurko, Stephen O'Brien, Jules S. Osinski, David F. Welch, Donald R. Scifres

Author Affiliations +

Proceedings Volume 2684, High-Speed Semiconductor Laser Sources; (1996) https://doi.org/10.1117/12.236938
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

High-power semiconductor sources capable of high-speed modulation are very desirable for free-space digital telecommunications such as satellite optical communication links. Moreover, a diffraction limited beam quality is necessary for most applications. We describe advances in the development of high-power, diffraction-limited semiconductor lasers based on the master oscillator/power amplifier (MOPA) architecture and capable of high-speed modulation. Devices containing monolithically integrated electro-absorption or phase modulators demonstrate 5 GHz small signal modulation bandwidth at 1 W output power.

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Jean-Marc Verdiell, Robert J. Lang, Kenneth M. Dzurko, Stephen O'Brien, Jules S. Osinski, David F. Welch, and Donald R. Scifres "Monolithically integrated high-speed high-power diffraction-limited semiconductor sources for space telecommunications", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); https://doi.org/10.1117/12.236938

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