Techniques for increasing output power from mode-locked semiconductor lasers

Alan Mar; G. Allen Vawter

doi:10.1117/12.236928

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1 April 1996 Techniques for increasing output power from mode-locked semiconductor lasers

Alan Mar, G. Allen Vawter

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Proceedings Volume 2684, High-Speed Semiconductor Laser Sources; (1996) https://doi.org/10.1117/12.236928
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Mode-locked semiconductor lasers have drawn considerable attention as compact, reliable, and relatively inexpensive sources of short optical pulses. Advances in the design of such lasers have resulted in vast improvements in pulsewidth and noise performance, at a very wide range of repetition rates. An attractive application for these lasers would be to serve as alternatives for large benchtop laser systems such as dye lasers and solid-state lasers. However, mode- locked semiconductor lasers have not yet approached the performance of such systems in terms of output power. Different techniques for overcoming the problem of low output power from mode-locked semiconductor lasers are discussed. Flared and arrayed lasers have been used successfully to increase the pulse saturation energy limit by increasing the gain cross section. Further improvements have been achieved by use of the MOPA configuration, which utilizes a flared semiconductor amplifier stage to amplify pulses to energies of 120 pJ and peak powers of nearly 30 W.

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Alan Mar and G. Allen Vawter "Techniques for increasing output power from mode-locked semiconductor lasers", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); https://doi.org/10.1117/12.236928

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