Ultrahigh-speed InGaAs/GaAs MQW lasers with C-doped active regions

Konrad Czotscher; Eric C. Larkins; S. Weisser; Willy Benz; Juergen Daleiden; Ignacio Esquivias; Joachim Fleissner; Martin Maier; John D. Ralston; Beatriz Romero Herrero; A. Schoenfelder; Josef Rosenzweig

doi:10.1117/12.236942

1 April 1996 Ultrahigh-speed InGaAs/GaAs MQW lasers with C-doped active regions

Konrad Czotscher, Eric C. Larkins, S. Weisser, Willy Benz, Juergen Daleiden, Ignacio Esquivias, Joachim Fleissner, Martin Maier, John D. Ralston, Beatriz Romero Herrero, A. Schoenfelder, Josef Rosenzweig

Author Affiliations +

Proceedings Volume 2684, High-Speed Semiconductor Laser Sources; (1996) https://doi.org/10.1117/12.236942
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We describe short-cavity In_0.35Ga_0.65As/GaAs multiple quantum well (MQW) lasers with undoped and p-doped active regions. The epilayer structure consists of four 5.7 nm QWs separated by 20.1 nm barriers in a GaAs core. The cladding layers consist of Al_0.8Ga_0.2As. In the case of p-doped devices a 4.5 nm carbon (C)-doped region (2.5 multiplied by 10¹⁹ cm^-3) was inserted above each QW, separated by a 3.1 nm GaAs spacer, resulting in a modulation-doped core region. Using a CAIBE process, short-cavity ridge-waveguide lasers are fabricated in a triple-mesa geometry suitable for on-wafer probing. The best device (6 multiplied by 130 micrometers squared) with an undoped active region attained a damping-limited direct modulation bandwidth exceeding 40 GHz at a cw bias current of 160 mA. In contrast, the p-doped devices, demonstrating a maximum bandwidth of 37 GHz, are still limited by power dissipation. (alpha) -factors as low as 1.4 and 1.5 for undoped and p-doped devices, respectively, are extracted from measurements of the sub- threshold gain spectra. In addition, we demonstrate eye diagrams at 25 Gbit/s (limited by the pulse pattern generator) for these laser diodes. A complete characterization of dc and rf properties of these lasers is presented.

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Konrad Czotscher, Eric C. Larkins, S. Weisser, Willy Benz, Juergen Daleiden, Ignacio Esquivias, Joachim Fleissner, Martin Maier, John D. Ralston, Beatriz Romero Herrero, A. Schoenfelder, and Josef Rosenzweig "Ultrahigh-speed InGaAs/GaAs MQW lasers with C-doped active regions", Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); https://doi.org/10.1117/12.236942

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