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12 April 1996 Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range
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In this paper, we report on the growth of InSb on (100) Si and (111)B GaAs substrates and the growth of InAsSb alloys for longer wavelength applications. The fabrication and characterization of photodetectors based on these materials are also reported. Both photoconductive and photovoltaic devices are investigated. The photodiodes are InSb p-i-n structures and InSb/InAs1-xSbx/InSb double heterostructures grown on (100) and (111)B semi-insulating GaAs and Si substrates by low pressure metalorganic chemical vapor deposition and solid source molecular beam epitaxy. The material parameters for device structures have been optimized through theoretical calculations based on fundamental mechanisms. InSb p-i-n photodiodes with peak responsivities approximately 103 V/W were grown on Si and (111) GaAs substrates. An InAsSb photovoltaic detector with a composition of x equals 0.85 showed photoresponse up to 13 micrometers at 300 K with a peak responsivity of 9.13 X 10-2 V/W at 8 micrometers . The RoA product of InAsSb detectors has been theoretically and experimentally analyzed.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Erick J. Michel, Jedon D. Kim, Seoijin Park, Jianren Xu, Ian T. Ferguson, and Manijeh Razeghi "Sb-based infrared materials and photodetectors for the 3-5 and 8-12 μm range", Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996);

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