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29 July 1981 Reliable (AlGa)As DH Lasers Grown By Molecular Beam Epitaxy For Optical Communication Systems
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Proceedings Volume 0269, Integrated Optics I; (1981)
Event: 1981 Los Angeles Technical Symposium, 1980, Los Angeles, United States
Recent results obtained from the evaluation of proton-bombarded (AiGa)As DR stripe geometry lasers fabricated from DH wafers grown by molecular beam epitaxy (MBE) as sources in optical communication systems is reviewed. These DH wafers contain 8% AℓAs in the active layer. The MBE lasers were shown to maintain their excellent cw device characteristics stably at elevated temperatures (55°-70°C). The measured coefficient (T0) of the temperature dependence of the current threshold (Ith) for MBE lasers is discussed, and it is shown that it can be (≥220°C in the temperature range -50° to 85°C. The frequencies of self-pulsation for MBE lasers not mirror coated at the power levels used for optical communications, measured after 100 hours of accelerated aging at the elevated temperature of 55°-70°C are typically > 1 Gigahertz. This minimizes the adverse effects of self-pulsation upon laser performance. Long-term aging of MBE lasers at elevated temperature (70°C) under constant power output of 3 mW/mirror has also been carried out for lasers from several wafers. Lasers from two early wafers are still operating after hours at 70°C. When plotted on the usual log-normal graph, a median lifetime τm of ≈ 8,500 hrs. at 70°C is expected. The MBE lasers have also been evaluated, tested and aged in transmitters. The results obtained thus far show that they meet the objectives for use in 45/Mbs FT-3 lightwave transmission systems.
© (1981) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. T. Tsang "Reliable (AlGa)As DH Lasers Grown By Molecular Beam Epitaxy For Optical Communication Systems", Proc. SPIE 0269, Integrated Optics I, (29 July 1981);

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