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29 March 1996 Thermal shift in the exciton absorption maxima as a function of the chip package design
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Multiple quantum well reflection modulators are used in photonic switching systems. A change in device temperature will vary the band gap of the modulator material and therefore the location of the exciton absorption maxima. At some change in temperature the shift in maxima location will be too great and the device will become inoperative. External temperature controls can hold a specific point on the chip to a fraction of a degree, however, spacial non-uniformities in heat transfer from the chip to the environment can result in a temperature variation across the chip. The design of the chip, the materials and methods used to attach the chip to a mount, and the design of the mount can all affect the spacial temperature variation. We have used finite element analysis (FEA) to analyze the affects many of these design factors have on the temperature variation across the chip. By careful package design, the calculated temperature spread across a chip can be significantly reduced. We have also used the temperature dependence of the exciton absorption maxima to map the temperature of an existing chip. The chip and mount were then modeled by FEA. The experimentally measured temperatures and those calculated by FEA were found to be in good agreement.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Bruce Buchholz, Anthony L. Lentine, and Robert A. Novotny "Thermal shift in the exciton absorption maxima as a function of the chip package design", Proc. SPIE 2691, Optoelectronic Packaging, (29 March 1996);

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