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1 May 1996 Effect of p-doping profile on performance of strained multiquantum well InGaAsP/InP lasers
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Abstract
Leakage of electrons from the active region of InGaAs/InP laser heterostructures with different profiles of acceptor doping was measured by a purely electrical technique together with the device threshold current. Comparison of the obtained results with modeling data and SIMS analysis shows that carrier leakage of electrons over the heterobarrier depends strongly on the profile of p-doping and level of injection. In the case of a structure with an undoped p- cladding/waveguide interface the value of electron leakage current can reach 20% of the total pumping current at an injection current density of 10 kA/cm2 at 50 C. It is shown that carrier leakage in InGaAsP/InP multi-quantum-well lasers can be minimized and the device performance improved by utilizing a p-doped SCH layer.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory L. Belenky, C. Lewis Reynolds Jr., Rudolf F. Kazarinov, Venkat S. Swaminathan, Serge Luryi, and John Lopata "Effect of p-doping profile on performance of strained multiquantum well InGaAsP/InP lasers", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238996
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