Energy loss by hot carriers in polar semiconductors

Walter A. Harrison

doi:10.1117/12.238965

1 May 1996 Energy loss by hot carriers in polar semiconductors

Walter A. Harrison

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238965
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

Explicit forms for the rates of energy loss by a hot carrier to optical phonons, plasmons, and quasiparticle excitations are obtained for use in laser modeling. These forms contain the explicit dependence upon all system parameters, and give insight into the origin of each mechanism. Self-consistent screening is included, but it is seen that if the phonon and plasma frequencies ((omega) ₀ and (omega) _p, respectively) are comparable, the usual case, the total rate due to both is well given with no screening of either interaction. The interaction producing quasiparticle excitations is found to be screened to a good approximation by a dielectric function 1 plus (h(omega) _p)²/(2(delta) (epsilon) )² with (delta) (epsilon) the energy exchanged in the collision, quite different from the static form frequently assumed. Losses to plasmons and quasiparticle excitations are seen to be usually comparable and to dominate the phonon rate if the number of carriers per atom exceeds the ratio of the carrier effective mass to the reduced mass of the atoms, a ratio understandable in terms of classical collisions between carriers and between carriers and atoms. Energy loss rates as a function of energy are compared with a detailed computation by Jalabert and Das Sarma.

Citation Download Citation

Walter A. Harrison "Energy loss by hot carriers in polar semiconductors", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238965

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