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1 May 1996 Exciton tunneling in wide-band-gap semiconductors
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Abstract
We have studied exciton tunneling in (Zn,Cd)Se/ZnSe asymmetric double quantum wells using femtosecond time resolved transmission, photoluminescence and time-resolved photoluminescence measurements. The strong Coulomb correlation as well as Frohlich electron LO-phonon interaction in II-VI semiconductors make the tunneling process significantly different from that in III-VI structures. We observe fast (1 ps) exciton tunneling out of the narrow well, although LO-phonon scattering is forbidden for holes in a single- particle picture. However, our theoretical analysis shows that tunneling of the exciton as a whole entity with the emission of only one LO-phonon is very slow. Instead, the exciton tunnels via an indirect state in a two-step process whose efficiency is dramatically enhanced by Coulomb effects.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Yu. Ten, Fritz Henneberger, Michael Rabe, and Nasser Peyghambarian "Exciton tunneling in wide-band-gap semiconductors", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238966
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