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1 May 1996 Recent progress in AlGaN/GaN laser structures on 6H-SiC
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Abstract
Room temperature hole concentrations of 5 multiplied by 1017 cm-3 and mobilities of 8.4 cm2/V-s have been measured on heavily Mg doped GaN layers grown on SiC. Specific contact resistivities of 0.046 (Omega) -cm2 have been obtained from TLM measurements on ohmic contacts to these layers. Double heterostructures (DH) of GaN/AlxGa1-xN with x equals 0.1 have been grown on n-type 6H-SiC substrates. High quality facets have been fabricated by cleaving these DH structures. Photopumped stimulated emission has been observed in undoped structures at 372 nm at a threshold power density of 72 kW/cm2. An optical gain of 1000 cm-1 was measured in the same samples at 200 kW/cm2.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary E. Bulman, John A. Edmond, Vladimir A. Dmitriev, Hua-Shuang Kong, Michelle T. Leonard, Kenneth G. Irvine, V. I. Nikolaev, A. S. Zubrilov, and D. V. Tsvetkov "Recent progress in AlGaN/GaN laser structures on 6H-SiC", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.239007
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