Theory of non-Markovian optical gain in excited semiconductors

Do-Yeol Ahn

doi:10.1117/12.238961

1 May 1996 Theory of non-Markovian optical gain in excited semiconductors

Do-Yeol Ahn

Proceedings Volume 2693, Physics and Simulation of Optoelectronic Devices IV; (1996) https://doi.org/10.1117/12.238961
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

The optical gain of a quantum-well laser is studied taking into account the valence-band mixing, non-Markovian relaxation and the many-body effects. Conventional gain spectra calculated with the Lorentzian line shape function show two anomalous phenomena: unnatural absorption region below the band-gap energy and mismatch of the transparency point in the gain spectra with the Fermi-level separation, the latter suggesting that the carriers and the photons are not in thermal (or quasi) equilibrium. It is shown that the non-Markovian gain model with many-body effects removes the two anomalies associated with the Lorentzian line shape function with the proper choice of the correlation time.

Citation Download Citation

Do-Yeol Ahn "Theory of non-Markovian optical gain in excited semiconductors", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238961

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