Photocurrent anomaly in double-barrier quantum well structures

Stefan Ehret; Harald Schneider; Eric C. Larkins

doi:10.1117/12.238391

19 April 1996 Photocurrent anomaly in double-barrier quantum well structures

Stefan Ehret, Harald Schneider, Eric C. Larkins

Proceedings Volume 2694, Quantum Well and Superlattice Physics VI; (1996) https://doi.org/10.1117/12.238391
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

We investigated the intersubband photocurrent as a function of the bias voltage and the incident wavelength in n-type photovoltaic GaAs/AlAs/Al_0.3Ga_0.7As double-barrier quantum well (DBQW) infrared detectors. The significant photovoltaic behavior of the detectors arises from a segregation of the dopant during the growth process. For an externally applied bias voltage, which compensates the internal space-charge field, the photocurrent exhibits a multiple sign change for varying incident wavelengths. This observation can be understood in the context of resonant coupling between the excited state in the GaAs quantum well and states, which are confined in the Al_0.3Ga_0.7As-region. This coupling leads to an enhancement of the tunneling rates through the AlGaAs barriers and to a partial localization of the above barrier states in the GaAs region.

Citation Download Citation

Stefan Ehret, Harald Schneider, and Eric C. Larkins "Photocurrent anomaly in double-barrier quantum well structures", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); https://doi.org/10.1117/12.238391

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