Strain-engineered semiconductor heterostructures for novel optoelectronic devices

Hongen Shen

doi:10.1117/12.238383

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19 April 1996 Strain-engineered semiconductor heterostructures for novel optoelectronic devices

Hongen Shen

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Proceedings Volume 2694, Quantum Well and Superlattice Physics VI; (1996) https://doi.org/10.1117/12.238383
Event: Photonics West '96, 1996, San Jose, CA, United States

Abstract

In this paper we show that strain is a useful effect and in addition to improving the performance of existing devices it may be used with greater functionality to demonstrate novel optoelectronic devices. We give as examples two such devices that we have conceived and demonstrated, one each in the two respective areas of strain, lattice-mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.

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Hongen Shen "Strain-engineered semiconductor heterostructures for novel optoelectronic devices", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); https://doi.org/10.1117/12.238383

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