Translator Disclaimer
Paper
19 April 1996 Strain-engineered semiconductor heterostructures for novel optoelectronic devices
Author Affiliations +
Abstract
In this paper we show that strain is a useful effect and in addition to improving the performance of existing devices it may be used with greater functionality to demonstrate novel optoelectronic devices. We give as examples two such devices that we have conceived and demonstrated, one each in the two respective areas of strain, lattice-mismatch induced and thermal expansion coefficient mismatch induced. The higher performance and functionality in these devices demonstrate that strain engineered heterostructures are a very promising area for device research and development.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongen Shen "Strain-engineered semiconductor heterostructures for novel optoelectronic devices", Proc. SPIE 2694, Quantum Well and Superlattice Physics VI, (19 April 1996); https://doi.org/10.1117/12.238383
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top